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View mmdt3906 detailed specification:

MMDT3906 MMDT3906 MMDT3906 MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP) SOT-363 6 5 4 FEATURES 1 Epitaxial planar die construction 2 3 Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.2 A Collector Power Dissipation PC 0.2 W Thermal Resistance. Junction to Ambient Air R JA 625 /W Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Symbol Test conditions Min Parameter Typ Max Unit V(BR)CBO IC=-10 A,IE=0 Collector-base breakdown voltage -40 V V(BR)CEO IC=-1mA,IB=0 Collector-emitter breakdown voltage -40 V V(BR)E... See More ⇒

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