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CEM3307 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage 20 TC = 25 C - 7.3e TC = 70 C - 7.0e Continuous Drain Current (TJ = 150 C) ID TA = 25 C - 7.3a, b TA = 70 C - 5.9a, b A IDM - 32e Pulsed Drain Current - 4.1 TC = 25 C IS Continuous Source-Drain Diode Current TA = 25 C - 2.0a, b IAS Avalanche Current - 20 L = 0.1 mH EA... See More ⇒

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