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CEM4228 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel MOSFET S1 Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 TC = 25 C 7 Continuous Drain Current ID TC = 125 C 4 Continuous Source Current (Diode Conduction) a IS 3.6 A Pulsed Drain Current b IDM 28 Single Pulse Avalanche Current IAS 18 L = 0.1 mH Single Pulse Avalanche Energy EAS 16.2 mJ TC = 25 C 4 Maximum Power Dissipation b PD W TC = 125 C 1.3 Operating ... See More ⇒

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