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IRF5305STR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load Switch in High Current Applications D2PAK (TO-263) DC/DC Converters G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage - 60 V VGS Gate-Source Voltage 20 TC = 25 C - 35 Continuous Drain Current (TJ = 150 C) ID TC = 70 C - 30 A IDM Pulsed Drain Current (t = 300 s) - 100 IAS Avalanche Current - 32 L = 0.1 mH EAS 51 mJ Single Avalanche Energya TC = 25 C 61b PD... See More ⇒

 

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 irf5305str.pdf Design, MOSFET, Power

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