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View irf630mfp detailed specification:

IRF630MFP www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.265 f = 60 Hz) RoHS Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 5 Dynamic dV/dt Rating Qgd (nC) 8 Low Thermal Resistance Configuration Single Lead (Pb)-free Available D TO-220 FULLPAK G S S N-Channel MOSFET D G ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 TC = 25 C 10 Continuous Drain Current VGS at 10 V ID TC = 100 C 6.5 A Pulsed Drain Currenta IDM 32 Linear Derating Factor 0.24 W/ C Single Pulse Avalanche Energyb EAS 36 mJ Repetitive Avalanche Currenta IAR 7.2 A Repeti... See More ⇒

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