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View irf640p detailed specification:

IRF640P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 TC = 25 C 20 ID Continuous Drain Current (TJ = 175 C)b TC = 125 C 14 IDM Pulsed Drain Current 70 A IS Continuous Source Current (Diode Conduction) 12 IAS Avalanche Current 12 Single Pulse Avalanche Energy L = 0.1 mH EAS 20 mJ TC = 25 C 126b PD Maximum Power Dissipation W TA = 25 C 3a TJ, Tstg Oper... See More ⇒

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