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P1402CDG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 50 TC = 70 C 40 Continuous Drain Current (TJ = 175 C) ID TA = 25 C 21.8b, c A TA = 70 C 18b, c IDM Pulsed Drain Current 200 IAS Avalanche Current Pulse 39 L = 0.1 mH EAS Single Pulse Avalanche Energy 94.8 mJ TC = 25 C 50a, e IS Continuous Source-Drain Diode Current A TA = 25 C 3.13b, c TC = 25 C ... See More ⇒

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