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DH100N06 112A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.5m DS(on) (TYP) standard. 1 3 S I = 112A D 2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS 3 Applications Power switching applications DC-DC converters Full bridge control TO-220C 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25 ,unless otherwise noted) Parameter Symbol Rating Units Drian-to-Source Voltage V 68 V DSS Gate-to-Source Voltage V 20 V GSS T =25 112 A C Continuous Drain Current I D T =100 81 A C Pulsed Drain Current... See More ⇒

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