View dgw40n65bth detailed specification:
RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CE I 40 A C V I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temperature stable High short circuit capability(5us) Maximum Ratings Parameter Symbol Value Unit V 650 V CE Collector-Emitter Breakdown Voltage DC Collector Current, limited by T jmax T = 25 C 80 C I A C 40 T = 100 C C Diode Forward Current, limited by T jmax T = 25 C C 60 I A F 30 T = 100 C C V GE 20 V Continuous Gate-Emitter Voltage V GE 30 V Transient Gate-Emitter Voltage Turn off Safe Operating Area V 1200V, CE ... See More ⇒
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dgw40n65bth.pdf Design, MOSFET, Power
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