All Transistors. Equivalents Search

View 2n7002-g detailed specification:

MOSFET 2N7002-G (N-Channel) RoHS Device Features SOT-23 Power dissipation 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G S 0.083(2.10) G Gate 0.066(1.70) 0.006(0.15) S Source 0.002(0.05) G D Drain 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) S 0.006(0.15)max 0.020(0.50) Maximum Ratings (at TA=25 C) 0.013(0.35) Symbol 0.007(0.20)min Parameter Value Unit Drain-Source voltage VDS 60 V Drain current ID 250 mA Power dissipation PD 350 mW Dimensions in inches and (millimeter) Junction and storage temperature TJ, TSTG -55 +150 C Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Drain-Source breakdown voltage VGS=0V, ID=10 A V(BR)DSS 60 70 V Gate-Threshold voltage VDS=VGS, ID=250 A Vth(GS) 1 1.5 2.5 Gate-body leakage VDS=0V, VGS=15V IGSS 10 nA... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2n7002-g.pdf Design, MOSFET, Power

 2n7002-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7002-g.pdf Database, Innovation, IC, Electricity