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MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features 1 Gate SOT-23 -High density cell design for extremely low RDS(ON). 2 Source 3 Drain -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 2 -Case SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, 0.006(0.15) method 2026. 0.003(0.08) 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) Circuit diagram 0.004(0.10) max 0.020(0.50) D 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) G S Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Parameter Value Units Drain-source voltage VDS 50 V Continuous gate-source voltage VGS 20 V Continuous drain current ID 0.22 A Power dissipation PD 0.35 W Thermal resistance from Junction to ambient R JA 357 C/W Operating... See More ⇒

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