All Transistors. Equivalents Search

View bu508df detailed specification:

NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB = 0 700 V VCESM Collector-Emitter Voltage VBE = 0 1500 V IC Collector Current 8A ICM Collector Peak Current 15 A IB Base Current 4A ICsat Collector Current saturation 4.5 A IBM Base Peak Current 6A Pt Total Power Dissipation @ TC = 25 34 Watts TJ Junction Temperature 150 C TStg Storage Temperature -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit Thermal Resistance, Junction to Mounting Base RthJ-mb 1.0 K/W RthJ-h Thermal R... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 bu508df.pdf Design, MOSFET, Power

 bu508df.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bu508df.pdf Database, Innovation, IC, Electricity