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View ctb06n005 ctp06n005 detailed specification:

nvert CTB06N005,CTP06N005 Suzhou Convert Semiconductor Co ., Ltd. 68V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS DC/DC Converters Synchronous Rectification Device Marking and Package Information Device Package Marking CTB06N005 TO-263 CTB06N005 CTP06N005 TO-220 CTP06N005 Absolute Maximum Ratings at Tj= 25 C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 68 V Continuous Drain Current TC = 25 135 A C ID Continuous Drain Current TC = 100 94 A C IDM 540 A Pulsed Drain Current (note1) Gate Source Voltage VGSS 20 V Single Pulse Avalanche Energy (note2) EAS 290 mJ Avalanche Current IAS 44 A Power Dissipation TC = 25 (note3) 160 W C PD Power Dissipation TC = 100 (note3) 80 W C Opera... See More ⇒

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