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View ctp06n6p8 detailed specification:

ctp06n6p8ctp06n6p8

nvert CTP06N6P8 Suzhou Convert Semiconductor Co ., Ltd. 68V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS DC/DC Converters Synchronous Rectification Device Marking and Package Information Device Package Marking CTP06N6P8 TO-220 CTP06N6P8 Absolute Maximum Ratings at Tj= 25 C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 68 V Continuous Drain Current TC = 25 (note2) 115 A C ID Continuous Drain Current TC = 100 (note2) 85 A C IDM 460 A Pulsed Drain Current (note1) Gate Source Voltage VGSS 20 V Single Pulse Avalanche Energy (note1) EAS 487 mJ Avalanche Current IAS 57 A Power Dissipation TC = 25 (note3) 158 W C PD Power Dissipation TC = 100 (note3) 79 W C Operating Junction and Stor... See More ⇒

 

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