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View btd1664m3 detailed specification:

Spec. No. C223M3 Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/8 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25V IC 1.5A BTD1664M3 RCESAT 0.31 (typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA Complementary to BTB1132M3 Pb-free lead plating and halogen-free package Symbol Outline SOT-89 BTD1664M3 B Base C Collector B C E E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) ICP 3 (Note 1) A 0.5 W Power Dissipation PD 2 (Note 2) W Junction Temperature and Storage T... See More ⇒

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