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View btd882am3 detailed specification:

Spec. No. C848M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating package Symbol Outline BTD882AM3 SOT-89 B Base C Collector B C E E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Current (Pulse) ICP 7 (Note 1) A 600 mW Power Dissipation Pd 1 (Note 2) W 2 (Note 3) W 208 C/W Thermal Resistance, Junction to R JA 125 (Note 2) C/W Ambient 62.5 (Note 3) C... See More ⇒

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