View btd882d3 detailed specification:
Spec. No. C848D3-H Issued Date 2005.05.04 CYStech Electronics Corp. Revised Date 2006.04.21 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML B Base C Collector E Emitter E C B Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Current (Pulse) ICP 7 (Note) Power Dissipation (TA=25 ) 1 PD W Power Dissipation (TC=25 ) 10 Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note Pulse test, pulse width 380 s, duty cycle 2%. ... See More ⇒
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btd882d3.pdf Design, MOSFET, Power
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