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View btd882j3 detailed specification:

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outline BTD882J3 TO-252(DPAK) B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V IC(DC) 3 A Collector Current IC(Pulse) 7 *1 A Pd(Ta=25 ) 1 Power Dissipation W Pd(Tc=25 ) 10 Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note *1. Single Pulse Pw 350us,Duty 2%. BTD882J3 CYStek Product ... See More ⇒

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