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View 2n7002w detailed specification:

February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking 2N Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS 1.0M 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100 C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW ... See More ⇒

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