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View bc636 bc638 bc640 detailed specification:

BC636/638/640 Switching and Amplifier Applications Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC636 -45 V BC638 -60 V BC640 -100 V VCES Collector-Emitter Voltage BC636 -45 V BC638 -60 V BC640 -100 V VCEO Collector-Emitter Voltage BC636 -45 V BC638 -60 V BC640 -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, ... See More ⇒

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