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View bd176 bd178 bd180 detailed specification:

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VCEO Collector-Emitter Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A IC *Collector Current (Pulse) - 7 A PC Collector Dissipation (TC=25 C) 30 W R ja Junction to Ambient 70 C/W R jc Junction to Case 8.5 C/W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage ... See More ⇒

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