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December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22A transistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged, High density cell design for extremely low RDS(ON) reliable, and fast switching performance.These prod- Rugged and Reliable ucts are particularly suited for low voltage, low current applications such as small servo motor control, power Compact industry standard SOT-323 surface mount MOSFET gate drivers, and other switching applica- package tions. D S G SOT-323 Marking 138 Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 50 V VGSS Gate-Source Vol... See More ⇒

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