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August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optimized for low RDS(ON) low gate charge, low RDS(ON) and fast switching speed. High power and current handling capability Applications Fast switching speed DC/DC converter Low gate charge (8nC typical) D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage V 20 ID Drain Current Continuous (Note 1a) 4.9 A Pulsed 10 PD Power Dissipation (... See More ⇒

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