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March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable Optimized for use in high frequency DC/DC RDS(ON) specifications. The result is a MOSFET that is converters. easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall Low gade charge. efficiency. Very fast switching. D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Sourc... See More ⇒

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