All Transistors. Equivalents Search

View fdd5670 detailed specification:

December 2009 FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 18 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor drives D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V ID Drain Current Continuous (Note 3) 52 A Pulsed (Note 1a)... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fdd5670.pdf Design, MOSFET, Power

 fdd5670.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd5670.pdf Database, Innovation, IC, Electricity