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December 2002 FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (23nC typical). These MOSFETs feature faster switching and lower gate Fast switching speed. charge than other MOSFETs with comparable RDS(ON) High performance trench technology for extremely specifications. low RDS(ON). The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D G G S S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source V... See More ⇒

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