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July 2001 FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (6.5 nC typical) low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor drives . D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage 8 V ID Drain Current Continuous (Note 3) 21 A Pulsed (Note 1a) 100 PD Power Dissipation (Note ... See More ⇒

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