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October 2004 FDD6632 N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 70m General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.058 (Typ), VGS = 10V, ID = 9A low on-resistance. rDS(ON) = 0.090 (Typ), VGS = 4.5V, ID = 6A Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows Qg(TOT) (Typ) = 2.6nC, VGS = 5V operation to higher switching frequencies. Qgd (Typ) = 0.8nC Formerly developmental type 83317 CISS (Typ) = 255pF Applications DC/DC converters D D G G S D-PAK S TO-252 (TO-252) MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage 20 V Drain ... See More ⇒

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