View fdd6635 detailed specification:
February 2007 tm FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench 59 A, 35 V RDS(ON) = 10 m @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m @ VGS = 4.5 V capability to offer superior performance benefit in the Fast Switching applications. RoHS compliant Applications Inverter Power Supplies D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25 C (Note 3) 59 A @TA=25 C (Note 1a) 15 Pulsed (Note 1a) 100 EAS Single Pulse Avalanc... See More ⇒
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fdd6635.pdf Design, MOSFET, Power
fdd6635.pdf RoHS Compliant, Service, Triacs, Semiconductor
fdd6635.pdf Database, Innovation, IC, Electricity
