View fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu detailed specification:
November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF) provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction Improved dv/dt Capability (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings TC = ... See More ⇒
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fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf Design, MOSFET, Power
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