View fdmc7200s detailed specification:
June 2014 FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 m , 10 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel dual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5 A synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Q2 N-Channel Max rDS(on) = 10 m at VGS = 10 V, ID = 8.5 A Applications Max rDS(on) = 13.5 m at VGS = 4.5 V, ID = 7.2 A Mobile Computing RoHS Compliant Mobile Internet Devices General Purpose Point of Load Bottom Bottom VIN D1 VIN Q2 D1 5 4 Pin 1 VIN D1 GHS G1 VIN D1 6 3 7 2 GND S2 GND S2 GND 8 1 S2... See More ⇒
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fdmc7200s.pdf Design, MOSFET, Power
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BJT: GA1A4M | SBT42 | 2SA200-Y
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