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February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) convertional switching PWM contollers. It has been optimized for and hign efficiency low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance. Next Generation enhanced body diode technology, engineered for soft recovery Applications 100% UIL tested Synchronous rectifier RoHS Compliant Load switch/Orring Motor switch Bottom Top Pin 1 S S D S S G S D S D D D D G D D Power 33 MO... See More ⇒

 

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 fdmc8321l.pdf Design, MOSFET, Power

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