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December 2014 FDMC8321LDC N-Channel Power Trench MOSFET 40 V, 108 A, 2.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 21 A technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely High performance technology for extremely low rDS(on) low Junction-to-Ambient thermal resistance. RoHS Compliant Applications Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier Pin 1 G S S S D S D S D D S D D D D G Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Rating... See More ⇒

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