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October 2013 FDMC8327L N-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Profile - 0.8mm max in Power 33 yet maintain superior switching performance. 100% UIL test Application RoHS Compliant DC-DC Conversion Bottom Top S D D D D D 8 7 6 5 S D S D G D G S S S 1 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage 20 V Drain Current - Continuous (Package limited) TC = 25 C 14 - Continuous (Silicon limited) TC = 25 C 43 ID ... See More ⇒

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