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April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 31nC) stripe, DMOS technology. Low Crss ( Typ. 15pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D D G G TO-220F TO-220 G D S G D S FDPF Series FDP Series S S MOSFET Maximum Ratings... See More ⇒

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