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IGBT FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switching technology show outstanding performance in conduction Low Saturation Voltage VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as enhanced High Input Impedance avalanche ruggedness. These devices are well suited for Built-in Fast Recovery Diode Induction Heating ( I-H ) applications Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C C G G TO-264 E E G C E Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Description FGL60N100BNTD Units VCES Collector-Emitter Voltage 1000 V VGES Gate-Emitter Voltage 25 V Collector Current @ TC = 25 C60 A IC Collector Current @ TC = 100 C42 A ICM (1) Pulsed Collector Current 200 A IF Diode Cont... See More ⇒

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