View fqb7n20ltm detailed specification:
December 2000 TM QFET QFET QFET QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D G G S D2-PAK I2-P... See More ⇒
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fqb7n20ltm.pdf Design, MOSFET, Power
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