All Transistors. Equivalents Search

View fqb7n30tm detailed specification:

April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D D G G S D -PAK I -PAK G D S FQB Series FQI Series S AbsoIute Maximum Ratings T = 25 C unless otherwise noted SymboI Pa... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqb7n30tm.pdf Design, MOSFET, Power

 fqb7n30tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb7n30tm.pdf Database, Innovation, IC, Electricity