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HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a Short Circuit Rating MOSFET and the low on-state conduction loss of a bipolar Low Conduction Loss transistor. Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Temperature Compensating SABER Model conduction losses are essential, such as AC and DC motor Thermal Impedance SPICE Mo... See More ⇒

 

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