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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC loss of a bipolar transistor. The much lower on-state voltage Low Conduction Loss drop varies only moderately between 25oC and 150oC. Related Literature This IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount applications operating at high frequencies where low Components to PC Boards... See More ⇒

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