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HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC transistor. The much lower on-state voltage drop varies only Low Conduction Loss moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel Temperature Compensating SABER Model is the development type TA49372. www.fairchildsemi.com This IGBT is ideal for many high voltage switching P... See More ⇒

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