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HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30A The HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18A switching devices combining the best features of MOSFETs 600V Switching SOA Capability and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC loss of a bipolar transistor. The much lower on-state voltage Low Conduction Loss drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode Temperature Compensating SABER Model used in anti-parallel is the development type TA49373. www.fairchildsemi.com This IGBT is ideal for many high voltage switching ... See More ⇒

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