All Transistors. Equivalents Search

View hgtg40n60a4 detailed specification:

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o varies only moderately between 25oC and 150oC. This IGBT Low Conduction Loss is ideal for many high voltage switching applications operating at high frequencies where low conduction losses Packaging are essential. This device has been optimized for high JEDEC STYLE TO-247 frequency switch mode power supplies. E Form... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 hgtg40n60a4.pdf Design, MOSFET, Power

 hgtg40n60a4.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtg40n60a4.pdf Database, Innovation, IC, Electricity