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HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oC The HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA Capability Punch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and Short Circuit Rating bipolar transistors. This device has the high input impedance Low Conduction Loss of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type Thermal Impedance SPICE Model TA49308. The Diode used is the development type TA49058 Temperature Compensating SABER Model www.fairchildsemi.com (Part number RHRD6120). Rel... See More ⇒

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