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View irf510a detailed specification:

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175 C Operating Temperature n Lower Leakage Current 10 A (Max.) @ VDS = 100V n Lower RDS(ON) 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 5.6 ID A Continuous Drain Current (TC=100 ) 4 IDM Drain Current-Pulsed (1) 20 A VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (2) 63 mJ IAR Avalanche Current (1) 5.6 A EAR Repetitive Avalanche Energy (1) 3.3 mJ dv/dt Peak Diode Recovery dv/dt (2) 6.5 V/ns Total Power Dissipation (TC=25 ) 33 W PD Linear Derating F... See More ⇒

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