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View irf630 rf1s630sm detailed specification:

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for Nanosecond Switching Speeds applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Linear Transfer Characteristics power bipolar switching transistors requiring high speed and High Input Impedance low gate drive power. These types can be operated directly Related Literature from integrated circuits. -... See More ⇒

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