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December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 m Description Features These N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF) been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand Fast Switching high energy pulse in the avalanche and commutation 100% Avalanche Tested mode. These devices are well suited for high efficiency Improved dv/dt Capability switching DC/DC converters and switch mode power supplies. D G G DS TO-220 S Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter IRF634B_FP001 Unit VDSS Drain-Source Voltage 250 V ID Drain ... See More ⇒

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