All Transistors. Equivalents Search

View ksd882 detailed specification:

November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing TO-126 1 Complement to KSB772. 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 3 A IC Collector Current(Pulse)** 7 A IB Base Current 0.6 A PD Total Device Dissipation(TC=25 C) 10 W Total Device Dissipation(Ta=25 C) 1 W TJ, TSTG Junction and Storage Temperature - 55 +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** PW 10ms, Duty Cycle 50% Electrical Characteristics. Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ksd882.pdf Design, MOSFET, Power

 ksd882.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ksd882.pdf Database, Innovation, IC, Electricity