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View mje350 detailed specification:

MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 500 mA PC Collector Dissipation (TC=25 C) 20 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V ICBO Collector Cut-off Current VCB = - 300V, IE = 0 -100 A IEBO Emitter Cut-off Current VBE = - 3V, IC = 0 -100 A hFE DC Current Ga... See More ⇒

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