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View 2n5401s detailed specification:

SEMICONDUCTOR 2N5401S TECHNICAL DATA High Voltage Transistor FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT 23 2N5401S 2L 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CBO 160 Vdc Emitter Base Voltage V EBO 5.0 Vdc 1 Collector Current Continuous I C 500 mAdc BASE THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit EMITTER Total Device Dissipation FR- 5 Board (1) P D 225 mW T A =25 C Derate above 25 C 1.8 mW/ C Thermal Resistance, Junction to Ambient R 556 C/W JA Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25 C Derate above 25 C 2.4 mW/ C Thermal Resistance, Junction to Ambient R 417 ... See More ⇒

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